PIONEERING GaN TECHNOLOGY ADVANCEMENTS SINCE 2020

Since 2020, Innosonix has led the way in applying Gallium Nitride (GaN) transistor technology to the world of professional audio, pioneering its use for musical applications.

GaN technology, more commonly seen in high-power, high-efficiency fields, is with the help of Innosonix setting a new standard for audio performance. Unlike traditional silicon MOSFETs, GaN transistors offer cleaner switching and shorter deadtime, resulting in significantly improved audio clarity. This translates to a better Signal-to-Noise Ratio (SNR), lower Total Harmonic Distortion plus Noise (THD+N), and reduced Transient Intermodulation Distortion (T-IMD), allowing for a richer, purer sound experience that’s highly responsive to musical detail.

The benefits of GaN go beyond audio quality; they also enhance power efficiency and design flexibility. With GaN, Innosonix can deliver double the power within the same or even smaller footprint, a critical advantage for compact, powerful audio systems. Remarkably, Innosonix’s D² amplifiers achieve 500W per bridged output with significantly smaller heatsinks —a feat that reduces both size and weight. Additionally, GaN technology offers lower idle power consumption, making it not only powerful but also energy-efficient and environmentally conscious.

By adopting GaN, Innosonix has reshaped expectations for professional audio technology, bringing unseen channel counts, minimal distortion, and exceptional efficiency to musical applications. This innovation represents a leap forward in sonic performance, setting Innosonix apart as a true pioneer in the industry.